Static Induction Transistor
SIT(Static Induction Transistor)
Junichi Nishizawa This is the only semiconductor device developed by Tohoku University Professor Emeritus.
It utilizes the electrostatic induction effect, it can cope with large current, consumes little power, reduces the channel resistance to the limit, realizes low internal resistance, high speed operation, low loss.
It is a semiconductor device with excellent characteristics, which enables faithful amplification to the input signal waveform.
|Triode vacuum tube characteristics||Less odd harmonic distortion|
|Equal μ characteristic, linearity is good||Low voltage amplification distortion|
|High voltage amplification factor||Low voltage drive|
|High frequency characteristics are good||The product of the gain bandwidth is wide and the phase distortion is small|
|Less generation noise||Less internally generated noise|
|Low output impedance||Good output transformer characteristics can be obtained|
|Lifespan is semi-permanent||There is no characteristic change with time|
|It is difficult for thermal runaway||It is hard to break|